EE-SPW311 / 411

Through-beam Photomicrosensor with a sensing distance as long as 1 m.

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Ratings and Specifications

Models		EE-SPW311, EE-SPW411
Sensing distance		1 m
Sensing object		Opaque: 5 mm dia. min.
Directional angle		5 to 20 °
Light source		GaAs infrared LED (pulse lighting) with a peak wavelength of 940 nm
*Indicator 1**		Light indicator (red)
Supply voltage		5 ( - 5%) to 24 (+10%) VDC, ripple (p-p): 5% max.
Current consumption		40 mA max. (Emitter: 20 mA max., Receiver: 20 mA max.)
Control output		NPN open collector: Load power supply voltage: 5 to 24 VDC Load current: 100 mA max. 100 mA load current with a residual voltage of 0.8 V max. 10 mA load current with a residual voltage of 0.4 V max.
*Response frequency 2**		100 Hz min.
Ambient illumination		3,000 lx max. with incandescent light on the surface of the receiver
Ambient temperature range		Operating: - 10 to +55 ° C Storage: - 25 to +65 ° C

Ambient humidity range		Operating: 5% to 85% Storage: 5% to 95%

Vibration resistance		Destruction: 200 to 2,000 Hz (peak acceleration: 100 m/s²) 1.5-mm double amplitude for 2 h (4-min periods) each in X, Y, and Z directions

Shock resistance		Destruction: 500 m/s² for 3 times each in X, Y, and Z directions
Enclosure rating		IEC IP60
Connecting method		Special connector (soldering not possible)
Weight (packaged)		Approx. 8.8 g
Material	Case	Polybutylene phthalate (PBT)
	Lens	Polycarbonate
Accessories		EE-1006L/D Connectors with Cables, Instruction Manual

^*1. The indicator is a GaP red LED (peak wavelength: 700 nm).

^*2. The response frequency was measured by detecting the following rotating disk.

Caution: In the interenst of product improvement, specifications are subject to change without notice.

Sensors