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Retroreflective Photomicrosensor with Lens


Photomicrosensor with light modulation for reduced external light interference.

Models EE-SPZ301-A, EE-SPZ401-A
Sensing distance *1 200 mm ( using E39-R1 reflector)
Light source GaAs infrared LED (pulse lighting) with a peak wavelength of 940 nm
Indicator *2 Light indicator (red)
Supply voltage 5 to 24 VDC ±10%, ripple (p-p): 5% max.
Current consumption Average: 15 mA max., Peak: 50 mA max.
Control output NPN voltage output
Load power supply voltage: 5 to 24 VDC
Load current: 80 mA max.
OFF current: 0.5 mA max.
80 mA load current with a residual voltage of 1.0 V max.
10 mA load current with a residual voltage of 0.4 V max.
Response frequency *3 100 Hz min.
Ambient illumination 3,000 lx max. with incandescent light or sunlight on the surface of the receiver
Ambient temperature
Operating: - 10 to +55 ° C
Storage: - 25 to +65 ° C
Ambient humidity range Operating: 5% to 85%
Storage: 5% to 95%
Vibration resistance Destruction: 10 to 55 Hz, 1.5-mm double amplitude for 2 h each in X, Y, and Z directions
Shock resistance Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions
Degree of protection IEC IP50
Connecting method Special connector (soldering not possible)
Weight (packaged) Approx. 3 g
Material Case Polycarbonate

*1. Operation may not be possible near the sensor.
*2. The indicator is a GaP red LED (peak wavelength: 700 nm).
*3. The response frequency was measured by detecting the following rotating disk.

EE-SPZ-A Specifications 2