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EE-SPY801 / 802

Wafer-carrier Mounting Photomicrosensors

EE-SPY801 / 802

Photomicrosensors for detecting wafer-carrier mounting.

ModelsEE- SPY801/802
Sensing distance
(Standard sensing object)
0 to 5 mm ( White paper: 15 × 15 mm2, reflection factor: 90%)
0 to 3 mm ( Black paper: 15 × 15 mm2, reflection factor: 10%)
Sensing objectTransparent or opaque wafer carriers
Operation indicatorLit orange when object is detected.
Light sourceGaAs infrared LED with a peak wavelength of 940 nm
Supply voltage12 to 24 VDC ±10%, ripple (p-p): 5% max.
Current consumption30 mA max.
Control outputNPN open collector:
Load power supply voltage: 5 to 24 VDC
Load current: 100 mA max.
OFF current: 0.5 mA max.
100 mA load current with a residual voltage of 0.8 V max.
40 mA load current with a residual voltage of 0.4 V max.
Response time5 ms max.
Ambient illumination3,000 lx max. with incandescent light or sunlight on the surface of the receiver
Ambient temperature rangeOperating: - 10 to +55 ° C
Storage: - 25 to +65 ° C (with no icing)
Ambient humidity rangeOperating: 5% to 85%
Storage: 5% to 95% (with no condensation)
Vibration resistanceDestruction: 1 to 500 Hz, 1.0-mm single amplitude or 150 m/s2 each in X, Y, and Z directions
3 times and for 11 min. each
Shock resistanceDestruction: 500 m/s2 for 3 times each in X, Y, and Z directions
Degree of protectionIEC IP30
Connecting methodPre-wired (Standard length: 2 m)
Weight (packaged)Sensor: Approx. 43 g; Accessory (Pedestal): Approx. 9 g
MaterialCaseEthylene tetrafluoro ethylene (ETFE)
Base platePolybutylene phthalate (PBT)
AccessoriesInstruction Manual