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EE-SX77 / SX87

Photomicrosensor with Slim Cable (Non-modulated)

EE-SX77 / SX87

Slim, Compact Photomicrosensor that is still easy to use.

Type Standard L-shaped T-shaped
NPN models EE-SX770/EE-SX870
EE-SX770A/EE-SX870A
EE-SX771/EE-SX871
EE-SX771A/EE-SX871A
EE-SX772/EE-SX872
EE-SX772A/EE-SX872A
PNP models EE-SX770P/EE-SX870P
EE-SX770R/EE-SX870R
EE-SX771P/EE-SX871P
EE-SX771R/EE-SX871R
EE-SX772P/EE-SX872P
EE-SX772R/EE-SX872R
Sensing distance 5 mm (slot width)
Sensing object Opaque: 2 × 0.8 mm min.
Differential distance 0.025 mm
Light source GaAs infrared LED with a peak wavelength of 940 nm
Indicator Light indicator (red) (turns ON when light is interrupted for models with A or R suffix)
Supply voltage 5 to 24 VDC ±10%, ripple (p-p): 10% max.
Current consumption 35 mA max. (NPN models), 30 mA max. (PNP models)
Control output NPN open collector:
5 to 24 VDC, 100 mA max.
100 mA load current with a residual voltage of 0.8 V max.
40 mA load current with a residual voltage of 0.4 V max.
OFF current (leakage current): 0.5 mA max.
PNP open collector:
5 to 24 VDC, 50 mA max.
50 mA load current with a residual voltage of 1.3 V max.
OFF current (leakage current): 0.5 mA max.
Response frequency * 1 kHz min. (3 kHz average)
Ambient illumination 1,000 lx max. with fluorescent light on the surface of the receiver
Ambient temperature range Operating: - 25 to +55 ° C
Storage: - 30 to +80 ° C (with no icing)
Ambient humidity range Operating: 5% to 85%
Storage: 5% to 95% (with no condensation)
Vibration resistance Destruction: 20 to 2,000 Hz (peak acceleration: 100 m/s2)
1.5-mm double amplitude for 2 h (4-min periods) each in X, Y, and Z directions
Shock resistance Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions
Degree of protection IEC60529 IP60
Connecting method Pre-wired (standard cable length: 2 m)
Weight (packaged) Approx. 20 g
Material Case: Polybutylene phthalate (PBT)

* The response frequency was measured by detecting the following rotating disk.

EE-SX77 / SX87 Specifications 2